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Recrystalline silicon carbide (RSiC) plate is made by high-purity coarse and fine silicon carbide (SiC) material sintered by evaporation-condensation mechanism at high temperature (2200~2450℃), without adding sintering additives. It is thinner, more energy-efficient and space-saving than traditional materials. The working temperature is 1650-1700℃, which has good dimensional stability under high temperature conditions.
Recrystalline silicon carbide plates are widely used in alumina, zirconia fine ceramics, foam ceramics, honeycomb ceramics, ITO target materials, various high-temperature fiber materials, electric porcelain, daily porcelain, art ceramics and other high-temperature materials, suitable for roller kilns, tunnel kilns and shuttle kilns. It is also widely used in combustion nozzles, solar thermal converters, diesel vehicle exhaust gas purification devices, metal smelting and other environments with extremely demanding performance requirements.
| Item | Unit | F-RSiC |
| SiC | % | ≥ 99 |
| Bulk density | g/cm3 | 2.65-2.75 |
| Apparent porosity | % | 15-18 |
| Compressive Strength | MPa | 300 |
| M.O.R.@RT | MPa | 80-100 |
| M.O.R. @1350℃ | MPa | 90-120 |
| C.T.E.@ 25℃-1200℃ | 10-6K-1 | 4.69 |
| Thermal shock resistance | / | Good |
| Thermal conductivity@1200℃ | w/m.k | 36.6 |
| Max working temperature | ℃ | 1620 |
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